Evaluation of interface states in MOS structures by DLTS with a bipolar rectangular weighting function
- 14 May 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (5) , 895-898
- https://doi.org/10.1088/0022-3727/14/5/021
Abstract
A method is presented for determining the interface-state distribution in MOS structures by deep-level transient spectroscopy (DLTS) with a bipolar rectangular weighting function which has the better signal-to-noise ratio (S/N) than the ordinary DLTS using a dual-channel boxcar averager. Experimental results are given for electron traps at the Si-SiO2 interface and compared with those obtained from the ordinary DLTS method. Experimental requirements for the present method to evaluate the interface-state distribution are also discussed.Keywords
This publication has 9 references indexed in Scilit:
- Deep-level-transient spectroscopy: System effects and data analysisJournal of Applied Physics, 1979
- Energy-resolved DLTS measurement of interface states in MIS structuresApplied Physics Letters, 1979
- Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient SpectroscopyJapanese Journal of Applied Physics, 1979
- Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS DiodesJapanese Journal of Applied Physics, 1979
- Evidence for multiphonon emission from interface states in MOS structuresSolid State Communications, 1978
- Transient capacitance measurements of hole emission from interface states in MOS structuresApplied Physics Letters, 1977
- New Developments in Defect Studies in SemiconductorsIEEE Transactions on Nuclear Science, 1976
- A correlation method for semiconductor transient signal measurementsJournal of Applied Physics, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974