Excitons in ZnSe-ZnS strained-layer superlattices
- 15 April 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (12) , 8743-8746
- https://doi.org/10.1103/physrevb.39.8743
Abstract
We present a theoretical study of excitons in ZnSe-ZnS strained-layer superlattices within an effective-mass approximation. A simple description of excitons in a quantum well is adopted because of a good agreement of the calculated subband energy of the superlattice with that of the quantum well. We demonstrate the exciton effects on the optical gap of ZnSe-ZnS superlattices by a variational method. The calculated optical gap exhibits inverse-square dependence on the well width, which is consistent with recent experimental data.Keywords
This publication has 17 references indexed in Scilit:
- Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlatticesJournal of Crystal Growth, 1988
- Hole subbands in strained GaAs-As quantum wells: Exact solution of the effective-mass equationPhysical Review B, 1987
- Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Electronic states in semiconductor heterostructuresIEEE Journal of Quantum Electronics, 1986
- Strained-layer superlattices: A brief reviewIEEE Journal of Quantum Electronics, 1986
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Theory of Cyclotron Resonance in Strained Silicon CrystalsPhysical Review B, 1963
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955