Existence of ≂64-meV deep acceptor in Se-implanted GaAs after close-contact annealing

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Abstract
Photoluminescence studies revealed the presence of a ≂64-meV deep acceptor in unimplanted and Se-implanted GaAs after close-contact annealing. Carbon has been identified as the major acceptor impurity in all implanted and unimplanted samples. No correlation has been found between implanted doses and the concentration of the ≂64-meV deep acceptors. The homogeneity of the carrier concentration and drift mobility profiles has been studied in terms of variations in the characteristics of metal-semiconductor field-effect transistors. Measurements of drain current transients (resulting from backgating effects under infrared illumination) have shown the existence of four deep levels. EL12 was found to be the principal electron trap, though was not detected within the implanted layer. EL2 was not detected at all. Specific influence of implantation and annealing are discussed. After annealing, it was noticed that migration of residual Mn and Cu towards the surface had occurred only in the implanted samples.

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