R-I profiling: A new technique for measuring semiconductor doping profiles
- 15 September 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (6) , 348-349
- https://doi.org/10.1063/1.1655503
Abstract
A new technique for measuring semiconductor doping profiles is described. The method is based on measurement of the isothermal space‐charge resistance R as a function of reverse current I in an avalanching abrupt junction. It is closely analogous to the usual C‐V profiling techniques but is complementary in the information gained. The new method has a minimum depth limitation set by the depletion region width at breakdown, but (in principle) has no maximum depth limit. Analysis of the technique and typical results using GaAs IMPATT diodes are presented.Keywords
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