Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S)
- https://doi.org/10.1143/jjap.30.3900
Abstract
Layer-by-layer growth of Bi2Sr2Ca n-1Cu n O x oxide superconducting films by molecular beam epitaxy (MBE) have been confirmed by observation of intensity oscillations in the reflection high-energy electron diffraction (RHEED) patterns. The period of one oscillation corresponded to a growth time of a half unit cell. The films have been prepared by a coevaporation technique, In which the Bi, Sr, Ca and Cu metal sources were evaporated simultaneously with Knudsen cells under an oxygen/ozone mixture (ozone content of 10%) atmosphere. The 2212 phases fabricated exhibited critical temperatures below 70 K.Keywords
This publication has 7 references indexed in Scilit:
- Layer-by-layer epitaxial growth of a Bi2Sr2CuO6 thin film on a Bi2Sr2CaCu2O8 single crystalApplied Physics Letters, 1991
- Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV IrradiationJapanese Journal of Applied Physics, 1991
- Reflection high-energy electron diffraction oscillations during epitaxial growth of high-temperature superconducting oxidesPhysical Review Letters, 1990
- Growth of untwinned Bi2Sr2Ca2Cu3Ox thin films by atomically layered epitaxyApplied Physics Letters, 1990
- Atomically layered heteroepitaxial growth of single-crystal films of superconducting Bi2Sr2Ca2Cu3OxApplied Physics Letters, 1990
- Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compoundsJournal of Crystal Growth, 1990
- Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter ControlJapanese Journal of Applied Physics, 1989