Intracell charge-transfer structures for signal processing
- 1 May 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (5) , 300-308
- https://doi.org/10.1109/T-ED.1974.17915
Abstract
An approach is presented for implementing a fully programmable transversal filter using surface charge-transfer techniques. Summation of the signals from each output tap is performed automatically by using common output electrodes, and fixed binary tap weights are Provided by selectively controlling the transfer of charge within each cell. Charge packets representing a sampled data input signal are inserted into individual cells where they remain until they are replaced by a new sample. Any combination of these packets can be nondestructively read during any clock cycle with the output being automatically summed. Since the charge does not leave the cell, but is simply "sloshed" back and forth within it during a read-out cycle, charge-transfer losses are not cumulative in this structure. The application of these structures in various familiar signal-processing functions is discussed, and both experimental results and theoretical expressions for their performance are presented. Experimental results on a simple test cell include reading the same charge more than 5 × 105times and demonstrating a charge-transfer loss of less than 10-7per transfer.Keywords
This publication has 17 references indexed in Scilit:
- Surface charge, collection, storage, and transport for visible image sensing arraysJournal of Luminescence, 1973
- The quantitative effects of interface states on the performance of charge-coupled devicesIEEE Transactions on Electron Devices, 1973
- Surface-Charge Transport in a Multielement Charge-Transfer StructureJournal of Applied Physics, 1972
- Noise and distortion considerations in charge-coupled devicesElectronics Letters, 1972
- Experimental measurement of noise in charge-coupled devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- Ion-implanted complementary MOS transistors in low-voltage circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- The P-channel refractory metal self-registered MOSFETIEEE Transactions on Electron Devices, 1971
- SURFACE CHARGE TRANSPORT IN SILICONApplied Physics Letters, 1970
- Integrated MOS and bipolar analog delay lines using bucket-brigade capacitor storagePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1970
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969