AlxGa1−xAs-GaAs vertical-cavity surface-emitting laser grown on Si substrate
- 19 February 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (8) , 740-742
- https://doi.org/10.1063/1.102698
Abstract
Data are presented demonstrating room‐temperature operation of AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting lasers grown on Si substrates. The device structures are grown using molecular beam epitaxy and a grown‐in quarter‐wave AlAs‐GaAs stack is used as the n‐side reflector and a nonalloyed Ag dot used as the p‐side reflector/contact. Pulsed threshold currents of ∼125 mA are obtained for a 15‐μm‐diam device.Keywords
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