Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP
- 8 June 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (23) , 2846-2848
- https://doi.org/10.1063/1.106843
Abstract
We compare InP‐based materials systems for multiple quantum well modulator application in the 1.06 μm wavelength range. Quantum well/barrier systems studied are the lattice‐matched system InxGa1−xAsyP1−y/InP, the strained system InAsyP1−y/InP, and the strain‐balanced system InAsyP1−y/InxGa1−xP. 50 period samples were grown on InP substrates by chemical beam epitaxy. We find the ternary systems to be better than the quaternary in terms of exciton peak sharpness. The InAsyP1−y/InxGa1−xP system was best overall, with our results suggesting that it is coherently strained to the InP substrate.Keywords
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