Diffusion of AS, B, and P In Tasi2
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicideJournal of Applied Physics, 1982
- A Novel Method to Measure Lateral Diffusion Length in Polycrystalline SiliconJournal of the Electrochemical Society, 1982
- Properties of evaporated and sputtered TaSi2films and the influence of the residual gas compositionIEEE Transactions on Electron Devices, 1982
- Properties of tungsten silicide film on polycrystalline siliconJournal of Applied Physics, 1981
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980