Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography
- 29 November 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (22) , 3488-3490
- https://doi.org/10.1063/1.125364
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- InAs-Dot/GaAs Structures Site-Controlled by in situ Electron-Beam Lithography and Self-Organizing Molecular Beam Epitaxy GrowthJapanese Journal of Applied Physics, 1999
- Spatial ordering of islands grown on patterned surfacesApplied Physics Letters, 1998
- Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxyApplied Physics Letters, 1998
- Island Size and Environment Dependence of Adatom Capture: Cu/Co Islands on Ru(0001)Physical Review Letters, 1998
- Perfect spatial ordering of self-organized InGaAs/AlGaAs box-like structure array on GaAs (311)B substrate with silicon nitride dot arrayApplied Physics Letters, 1997
- Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scaleApplied Physics Letters, 1997
- Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxyApplied Physics Letters, 1996
- Kinetic routes to the growth of monodisperse islandsApplied Physics Letters, 1995
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985