Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE
- 22 November 1999
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 176 (1) , 397-400
- https://doi.org/10.1002/(sici)1521-396x(199911)176:1<397::aid-pssa397>3.0.co;2-v
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxyApplied Physics Letters, 1998
- High-resolution X-ray diffraction analysis of cubic GaN grown on (001)GaAs by RF-radical source molecular beam epitaxyJournal of Crystal Growth, 1998
- Phase separation in InGaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1998
- Structural Analysis of Cubic GaN through X-Ray Pole Figure GenerationJapanese Journal of Applied Physics, 1997
- Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratioJournal of Electronic Materials, 1997
- Study of indium droplets formation on the InxGa1−xN films by single crystal x-ray diffractionJournal of Electronic Materials, 1997
- Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Electrical and structural properties of InxGa1−xN on GaAsApplied Physics Letters, 1995
- Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAsJapanese Journal of Applied Physics, 1994