High-resolution X-ray diffraction analysis of cubic GaN grown on (001)GaAs by RF-radical source molecular beam epitaxy
- 15 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 425-429
- https://doi.org/10.1016/s0022-0248(98)00315-7
Abstract
No abstract availableKeywords
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