Low-Noise HEMT Using MOCVD
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 34 (12) , 1522-1527
- https://doi.org/10.1109/tmtt.1986.1133573
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- 36.0 - 40.0 GHz HEMT Low Noise AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Broadband HEMT and GaAs FET Amplifiers for 18 - 26.5 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A low-noise microwave HEMT using MOCVDIEEE Transactions on Electron Devices, 1986
- Ultra low noise and high frequency operation of TEGFETS made by MBEPhysica B+C, 1985
- Microwave performance of 0.25-µm gate length high electron mobility transistorsIEEE Electron Device Letters, 1985
- Optimal noise figure of microwave GaAs MESFET'sIEEE Transactions on Electron Devices, 1979