Rapid profile measurements in ion implanted silicon

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Abstract
Ion beam etching has been used, in conjunction with the Van der Pauw technique, to determine the electrical profiles of implanted dopants in silicon, the profiles being obtained much more rapidly than by using the more usual anodic stripping. The damage produced by the ion beam must be taken into account, and this involves a simple correction to the depth scale. Profiles obtained for 40 kV B+ implanted silicon, annealed at temperatures between 500 and 970 degrees C, are presented and briefly discussed.