Planar semiconductor lasers using the photoelastic effect
- 15 June 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (12) , 7442-7447
- https://doi.org/10.1063/1.367988
Abstract
Planar separate-confinement, double-heterostructure, single-quantum-well photoelastic GaAs/AlGaAs lasers have been fabricated using a novel yet practical processing technique involving thin-film surface WNi stressors for waveguiding and ion implantation for isolation. A p++-GaAs contact layer regrown by chemical beam epitaxy has been used to improve the WNi ohmic contacts to the lasers. Even without bonding on heat sinks, these planar photoelastic lasers operate at continuous wave at room temperature. The lowest threshold is 29 mA for a cavity length of 178 μm and a stressor width of 5 μm. The internal quantum efficiency above threshold is 75%. The characteristic temperature is 114 K. The main waveguiding mechanism of the photoelastic lasers is determined to be weak index guiding with the beam waist in the junction plane measured 10 μm behind the end facet.This publication has 10 references indexed in Scilit:
- In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenicApplied Physics Letters, 1997
- A novel processing technique to fabricate planar InGaAsP/InP electroabsorption waveguide modulatorsJournal of Electronic Materials, 1995
- Low-temperature-processed (150–175 °C) Ge/Pd-based Ohmic contacts (ρc∼1×10−6 Ω cm2) to n-GaAsApplied Physics Letters, 1995
- Photoelastic waveguides and the controlled introduction of strain in III-V semiconductors by means of thin film technologyJournal of Applied Physics, 1995
- High efficiency single quantum well graded-index separate-confinement heterostructure lasers fabricated with MeV oxygen ion implantationApplied Physics Letters, 1989
- Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1−xAlxAs lasersJournal of Applied Physics, 1979
- Gain−induced guiding and astigmatic output beam of GaAs lasersJournal of Applied Physics, 1975
- Proton-implanted optical waveguide detectors in GaAsApplied Physics Letters, 1973
- Resonant modes of GaAs junction lasersIEEE Journal of Quantum Electronics, 1969
- On the Propagation of Gaussian Beams of Light Through Lenslike Media Including those with a Loss or Gain VariationApplied Optics, 1965