Neutral (Cu-Li) complexes in GaP: The (Cu-Li)IIIbound exciton at 2.242 eV
- 15 September 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (6) , 3958-3965
- https://doi.org/10.1103/physrevb.32.3958
Abstract
A photoluminescence study is reported in order to identify a new radiative center in GaP co-doped with Cu and Li. This center, denoted (Cu-Li, binds an exciton with binding energy 110 meV. The bound-exciton spectrum shows sharp electronic lines and a structured phonon sideband with well-resolved replicas. The group of electronic transitions consists of spin-only-like singlet-triplet pairs, which are characteristic of tightly bound holes in a strong compressive axial crystal field. Two such singlet-triplet pairs are observed for the (Cu-Li center, instead of the usual one pair. A model taking into account the splitting of electron states as well as hole states is proposed to explain this additional splitting. The experimental work includes photoluminescence spectroscopy and time-resolved and Zeeman measurements as well as optically detected magnetic resonance measurements. The careful doping procedure includes isotope doping with both Cu and Li. The Li-isotope doping was clearly reflected in the phonon sideband. A neutral molecular associate of isoelectronic nature is suggested, with the (Cu-Li center involving and a pair of interstitial atoms, and .
Keywords
This publication has 11 references indexed in Scilit:
- Neutral (Cu-Li) complexes in GaP: The (Cu-Libound exciton at 2.306 eVPhysical Review B, 1985
- Photoluminescence studies of the 1.911-eV Cu-related complex in GaPPhysical Review B, 1982
- Optical properties of the Cu-related characteristic-orange-luminescence center in GaPPhysical Review B, 1982
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981
- Excited states of excitons bound to nitrogen pairs in GaPPhysical Review B, 1977
- The gallium-site donors germanium and silicon in gallium phosphideJournal of Luminescence, 1974
- Isoelectronic traps in semiconductors (experimental)Journal of Luminescence, 1973
- Isoelectronic Trap Li-Li-O in GaPPhysical Review B, 1971
- Stress Effects on Excitons Bound to Axially Symmetric Defects in SemiconductorsPhysical Review B, 1970
- Symmetry of Electron States in GaPPhysical Review Letters, 1968