Evidence of deep levels in crystalline CuInSe2
- 28 February 1986
- journal article
- Published by Elsevier in Solar Cells
- Vol. 16, 391-397
- https://doi.org/10.1016/0379-6787(86)90099-2
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Some characteristics of In-diffused CuInSe2 homojunctionsJournal of Applied Physics, 1984
- Electrical properties of p-type CuInSe2 single crystalsPhysica Status Solidi (a), 1979
- Electrical Properties of p- and n-Type CuInSe2Single CrystalsJapanese Journal of Applied Physics, 1979
- Thermally Stimulated Capacitance (TSCAP) in p-n JunctionsApplied Physics Letters, 1972
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968