Doping-induced selective area photoluminescence in porous silicon
- 19 April 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (16) , 1982-1984
- https://doi.org/10.1063/1.109510
Abstract
The incubation time (ti) for the onset of porous Si formation by stain etching in HF:HNO3:H2O was observed to be a strong function of dopant type and concentration. For B-doped p-Si, ti increased significantly with substrate resistivity (ρ), from ∼0.5 min for 0.004 Ω cm to ∼9 min for 50 Ω cm. P-doped n-Si substrates exhibited a ti which decreased with increasing ρ, from ∼10 min for 0.15 Ω cm to ∼8 min for 20 Ω cm. We have utilized the difference in ti between n- and p-type Si to produce selective area photoluminescence (PL) by Ga+ focused ion beam (FIB) implantation doping and B+ broad beam implantation doping of n-type Si. Using 30 kV FIB Ga+ implantation, PL patterns with submicrometer resolution have been obtained for the first time.Keywords
This publication has 8 references indexed in Scilit:
- Photoluminescence and formation mechanism of chemically etched siliconApplied Physics Letters, 1992
- Localized fabrication of Si nanostructures by focused ion beam implantationApplied Physics Letters, 1992
- Fine Structure of Porous Si with Visible PhotoluminescenceJapanese Journal of Applied Physics, 1992
- Demonstration of photoluminescence in nonanodized siliconApplied Physics Letters, 1992
- Visible luminescence from silicon wafers subjected to stain etchesApplied Physics Letters, 1992
- Photolithographic fabrication of micron-dimension porous Si structures exhibiting visible luminescenceApplied Physics Letters, 1992
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- On the Mechanism of Chemically Etching Germanium and SiliconJournal of the Electrochemical Society, 1960