Formation of SiO at Si/SiO2 interface and its influence on transport of group V dopants and Ge in SiO2
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 245-258
- https://doi.org/10.1016/0169-4332(89)90439-x
Abstract
No abstract availableKeywords
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