Current injection from a metal to a disordered hopping system. II. Comparison between analytic theory and simulation

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Abstract
Monte Carlo simulations of hopping injection from a metal into a random-organic dielectric, described in the previous paper (I), have been compared to results of analytic theory. Good agreement has been found for the field dependence of the yield of charge carriers as a function of the energy barrier at the interface. This is a crucial test for the validity of the assumptions required in order to render an analytical approach of hopping in a disordered system in the presence of a long-ranged Coulombic potential tractable. The most serious of these is the Onsager-like homogenous medium approach to treat the escape of a charge carrier from the Coulomb well once injected. The primary injection event into the dielectric has been treated in terms of hopping theory implying the concept of transport energy.