Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

This publication has 31 references indexed in Scilit:

• Interdefect charge exchange in silicon particle detectors at cryogenic temperatures
  IEEE Transactions on Nuclear Science, 2002
• Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si
  Physical Review B, 2002
• Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon
  Physical Review B, 2001
• Improved neutron radiation hardness for Si detectors: application of low resistivity starting material and/or manipulation of N/sub eff/ by selective filling of radiation-induced traps at low temperatures
  IEEE Transactions on Nuclear Science, 1999
• Characterization of deep levels introduced by alpha radiation in n-type silicon
  Journal of Applied Physics, 1993
• Electrical and optical properties of defects in silicon introduced by high-temperature electron irradiation
  Physical Review B, 1988
• Annealing Studies of Defects Pertinent to Radiation Damage in Si:B
  Physica Status Solidi (a), 1987
• A-centres build-up kinetics in the conductive matrix of pulled n-type silicon with calculation of their recharges at defect clusters
  Physica Status Solidi (a), 1981
• Defect clusters and simple defect build-up kinetics in fast-neutron irradiated n-Si
  Physica Status Solidi (a), 1978
• Disordered Regions in Semiconductors Bombarded by Fast Neutrons
  Journal of Applied Physics, 1959