High-frequency measurements of the mismatch on the Y-parameters of high-speed SiGe:C HBTs
- 1 January 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10719032,p. 163-168
- https://doi.org/10.1109/icmts.2006.1614296
Abstract
The performance of analog circuits operating at high frequencies is limited by device mismatch at these frequencies. In this paper, high-frequency measurements of the mismatch on the Y-parameters of bipolar transistors are discussed. After investigation of the impact of the deembedding structures and measurement accuracy, the RF matching behavior of 200 GHz SiGe:C HBTs is characterized over a wide range of frequencies and biasing conditions. The mismatch on the cut-off frequency and small-signal parameters are extracted.Keywords
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