cw laser assisted diffusion and activation of tin in GaAs from a SnO2/SiO2 source

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Abstract
A new technique for doping GaAs with Sn from a spin‐on SnO2/SiO2 source is described. Sn is first introduced in the GaAs substrate by a slow thermal ramp. Subsequent diffusion and activation of Sn is accomplished with a cw scanning laser. Results for laser power below and above the melting power of the substrate are presented. Transmission electron microscopy and electron diffraction patterns indicate that a chemical reaction involving the formation of a tin‐arsenide compound occurs during the diffusion process.