Si/ Ge/ Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS

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Abstract
Si/ Ge/ Si monolayer heterostructures grown on Si(100) by molecular beam epitaxy (MBE) have been studied by a surface sensitive EXAFS technique. It is shown that the heterointerfaces at several tens of angstrom below the surface can be probed by monitoring fluorescence yield with a high energy resolution detector in a total reflection geometry. The formation of ordered Si/ Ge/ Si heterointerface is evidenced by a Fourier transform analysis of the Ge K-EXAFS. In the Si/ Ge/ Si heterostructure, the determined Ge-Si distance suggests a large contribution of bond length relaxation.