Measuring acid generation efficiency in chemically amplified resists with all three beams
- 1 November 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 17 (6) , 3356-3361
- https://doi.org/10.1116/1.591011
Abstract
A method for measuring acid generation efficiency is presented and utilized to determine the relative efficiency of four photoacid generators (PAGs) upon radiation with photon, electron, and ion beams. In this method, chemically amplified resists are prepared with varying amounts of base, coated into thin films (1000 Å), and exposed. Linear plots of the base concentration against the threshold exposure dose for each resist yield the threshold acid concentration and the acid generation rate constant for each PAG. The acid-generating efficiency of the four PAGs (ND-Tf, TPS-Tf, TBI-PFOS, and TBI-Tf) upon irradiation with DUV (248 nm), EUV (13.4 nm), x-ray (1 nm), e beam (30 and 50 keV), and ions is evaluated.
Keywords
This publication has 23 references indexed in Scilit:
- Application of a New Empirical Model to the Electron Beam Lithography Process with Chemically Amplified ResistsJapanese Journal of Applied Physics, 1998
- Trajectory displacement effect in particle projection lithography systems: Modifications to the extended two-particle theory and Monte Carlo simulation techniqueJournal of Applied Physics, 1998
- Sensitivity and image quality of resists with electron-beam, ion-beam, and optical exposurePublished by SPIE-Intl Soc Optical Eng ,1998
- DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printingMicroelectronic Engineering, 1998
- Fluorescence detection of photoacid in chemically amplified resistsPublished by SPIE-Intl Soc Optical Eng ,1997
- Latent image formation: Nanoscale topography and calorimetric measurements in chemically amplified resistsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Following the Acid: Effect of Acid Surface Depletion on Phenolic PolymersPublished by American Chemical Society (ACS) ,1995
- Modelling of physical processes in ion lithographyThin Solid Films, 1992
- Methodology for determining the radiation efficiency and contrast characteristics in the case of electron and ion lithography, using positive polymer resistsThin Solid Films, 1991
- Characterization of positive photoresistIEEE Transactions on Electron Devices, 1975