Multiple equilibrium points and their significance in the second breakdown of bipolar transistors
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 16 (1) , 8-15
- https://doi.org/10.1109/jssc.1981.1051528
Abstract
No abstract availableKeywords
This publication has 42 references indexed in Scilit:
- Safe operating area for bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Two-dimensional carrier flow in a transistor structure under nonisothermal conditionsIEEE Transactions on Electron Devices, 1976
- Bipolar transistor modeling of avalanche generation for computer circuit simulationIEEE Transactions on Electron Devices, 1975
- Transistor design and thermal stabilityIEEE Transactions on Electron Devices, 1973
- Steady-state junction temperatures of semiconductor chipsIEEE Transactions on Electron Devices, 1972
- SLIC-a simulator for linear integrated circuitsIEEE Journal of Solid-State Circuits, 1971
- Second breakdown—A comprehensive reviewProceedings of the IEEE, 1967
- Large-Signal Behavior of Junction TransistorsProceedings of the IRE, 1954
- Resistance-network analogues with unequal meshes or subdivided meshesBritish Journal of Applied Physics, 1954
- Solution of Partial Differential Equations with a Resistance Network AnalogueBritish Journal of Applied Physics, 1950