Optimization of p-doping in GaAs photon-recycling light-emitting diodes operated at low temperature
- 27 March 2001
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 16 (5) , L21-L23
- https://doi.org/10.1088/0268-1242/16/5/101
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Efficient light emitting diodes by photon recycling and their application in pixelless infrared imaging devicesJournal of Applied Physics, 2000
- Efficient GaAs light-emitting diodes by photon recyclingApplied Physics Letters, 2000
- Pixel-less infrared imaging based on the integration of an n-type quantum-well infrared photodetector with a light-emitting diodeApplied Physics Letters, 1999
- Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diodePublished by SPIE-Intl Soc Optical Eng ,1999
- Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodesJournal of Electronic Materials, 1995
- Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructuresApplied Physics Letters, 1993
- Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAsJournal of Applied Physics, 1978