Efficient GaAs light-emitting diodes by photon recycling
- 3 January 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (1) , 4-6
- https://doi.org/10.1063/1.125718
Abstract
Heterostructure AlGaAs/GaAs light-emitting diodes (LEDs) with a thick active region have shown high external efficiencies, thanks to reabsorption in the active region. For high injection currents and low temperature, we report a 22% efficiency which corresponds to a 98% efficiency internally. We discuss the application of such LED when integrated with a quantum-well infrared photodetector for pixelless thermal imaging systems.Keywords
This publication has 10 references indexed in Scilit:
- Pixel-less infrared imaging based on the integration of an n-type quantum-well infrared photodetector with a light-emitting diodeApplied Physics Letters, 1999
- 16.8% external quantum efficiency from a planar LEDPublished by SPIE-Intl Soc Optical Eng ,1999
- Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diodePublished by SPIE-Intl Soc Optical Eng ,1999
- Impact of planar microcavity effects on light extraction-Part II: selected exact simulations and role of photon recyclingIEEE Journal of Quantum Electronics, 1998
- Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trendsIEEE Journal of Quantum Electronics, 1998
- Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diodeApplied Physics Letters, 1997
- Pixelless infrared imaging deviceElectronics Letters, 1997
- 16% external quantum efficiency from planar microcavityLEDsat 940 nm by precise matching of cavity wavelengthElectronics Letters, 1995
- Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructuresApplied Physics Letters, 1993
- Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAsJournal of Applied Physics, 1978