Defect-induced Si(100) dimer buckling structures studied by scanning tunneling microscopy
- 20 June 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 357-358, 468-471
- https://doi.org/10.1016/0039-6028(96)00203-8
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 5 references indexed in Scilit:
- Low-temperature scanning-tunneling-microscopy observations of the Si(001) surface with a low surface-defect densityPhysical Review B, 1994
- Dimer vacancies and dimer-vacancy complexes on the Si(100) surfacePhysical Review B, 1993
- Determination of the local electronic structure of atomic-sized defects on Si(001) by tunneling spectroscopyJournal of Vacuum Science & Technology A, 1989
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986