Electrical properties of oxides on silicon carbide grown by remote plasma chemical vapor deposition annealed in different gas ambients
- 30 April 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 46 (1-3) , 363-365
- https://doi.org/10.1016/s0921-5107(96)02006-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Effects of Ar and H2 annealing on the electrical properties of oxides on 6H SiCMaterials Science and Engineering: B, 1995
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Device-Quality SiO2/Si(100) Interfaces Prepared by a Two-Step Remote Plasma-Assisted Oxidation-Depositon ProcessJapanese Journal of Applied Physics, 1992