Electrical, optical, and structural properties of Ga-doped ZnSe grown by molecular beam epitaxy
- 30 June 1990
- journal article
- Published by Elsevier in Materials Letters
- Vol. 9 (10) , 396-400
- https://doi.org/10.1016/0167-577x(90)90073-u
Abstract
No abstract availableKeywords
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