A theoretical analysis of electron transport in ZnSe

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Abstract
Boltzmann’s transport equation was solved using a variational method (including all major scattering mechanisms and screening) yielding electron mobilities in n‐ZnSe. The electron concentration dependence of the mobility at 300 and 77 K was calculated as functions of ionized impurity concentration and compensation ratio. A routine method for determining acceptor and donor densities (total and ionized) and compensation ratio from given experimental mobility and carrier concentration values is outlined; mobilities reported for samples grown by various techniques are discussed. Inherent limits to the mobility are given as about 800 cm2/V s (n∼3×1018 cm−3) and about 1×104 cm2/V s (n≤4×1015 cm−3) at 300 and 77 K, respectively. The calculated temperature dependence of the mobility for η=−6 is used to explain qualitative trends in such behavior for material grown by different techniques, and to provide an inherent mobility limit at this η.