Temperature Dependence of SiGe Coherent Island Formation on Si(100): Anomalous Reentrant Behavior
- 25 May 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 80 (21) , 4721-4724
- https://doi.org/10.1103/physrevlett.80.4721
Abstract
Studies of the temperature dependence of coherent island formation in SiGe alloys (nominal composition ) on Si(100) reveal an anomalous islanding behavior. Three dimensional island formation appears to be suppressed at temperatures below , and again in a narrow temperature window near . At all other temperatures, faceted 3D islands are observed. The anomalous effect at intermediate temperatures is qualitatively explained on the basis of a relative reduction in the driving force due to temperature dependent behavior of Ge segregation and interdiffusion.
Keywords
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