Tunneling microscopy of 2H-: A compound semiconductor surface
- 15 March 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (8) , 4292-4295
- https://doi.org/10.1103/physrevb.37.4292
Abstract
Molybdenum disulfide, a layered semiconductor, is an interesting material to study with the tunneling microscope because two structurally and electronically different atomic species may be probed at its surface. We report on a vacuum scanning tunneling microscopy study of 2H-. Atomic resolution topographs and current images show the symmetry of the surface unit cell and clearly reveal two distinct atomic sites in agreement with the well-known x-ray crystal structure.
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