Epitaxial growth of Ge on GaAs substrates
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 65 (1-3) , 439-443
- https://doi.org/10.1016/0022-0248(83)90084-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Temperature dependence of the growth rate of silicon prepared through chemical vapor deposition from silaneApplied Physics Letters, 1982
- Single-crystal GaAs films on amorphous substrates by the CLEFT processJournal of Vacuum Science and Technology, 1982
- Fiber-optical transmission between 0.8 and 1.4 µmIEEE Transactions on Electron Devices, 1978
- Epitaxial deposition of degenerate n-type layers of Ge on GaAsJournal of Crystal Growth, 1972
- Epitaxial Growth of Mirror Smooth Ge on GaAs and Ge by the Low Temperature GeI[sub 2] Disproportionate ReactionJournal of the Electrochemical Society, 1968
- Epitaxial Deposition of Germanium onto Semi-Insulating GaAsJournal of the Electrochemical Society, 1968