Epitaxial deposition of degenerate n-type layers of Ge on GaAs
- 31 May 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 13-14, 315-318
- https://doi.org/10.1016/0022-0248(72)90176-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Growth Rate and Surface Morphology Studies in the GeCl[sub 4]-H[sub 2] SystemJournal of the Electrochemical Society, 1969
- Epitaxial Growth of Mirror Smooth Ge on GaAs and Ge by the Low Temperature GeI[sub 2] Disproportionate ReactionJournal of the Electrochemical Society, 1968
- Epitaxial Deposition of Germanium onto Semi-Insulating GaAsJournal of the Electrochemical Society, 1968
- Experimental Studies of Impurity Doping in Vapor Growth of GeJapanese Journal of Applied Physics, 1963
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962
- Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle ProcessIBM Journal of Research and Development, 1960