Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects
- 31 December 2003
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 340-342, 1137-1141
- https://doi.org/10.1016/j.physb.2003.09.099
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion lengthJournal of Applied Physics, 2003
- X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in siliconJournal of Applied Physics, 2002
- Nanometer-scale metal precipitates in multicrystalline silicon solar cellsJournal of Applied Physics, 2001
- Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behaviorPhysical Review B, 2001
- Out-Diffusion and Precipitation of Copper in Silicon: An Electrostatic ModelPhysical Review Letters, 2000
- Synchrotron-based impurity mappingJournal of Crystal Growth, 2000
- Release of metal impurities from structural defects in polycrystalline siliconApplied Physics Letters, 1997