Low-temperature specific heat and resistivity of single-crystallineSi
- 15 May 1990
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (14) , 9721-9724
- https://doi.org/10.1103/physrevb.41.9721
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Crystal growth, characterisation and resistivity measurements of Pd2Si single crystalsJournal of Physics: Condensed Matter, 1989
- Analysis of the electrical resistivity of Ti, Mo, Ta, and W monocrystalline disilicidesJournal of Applied Physics, 1989
- Low-temperature specific heat ofPhysical Review B, 1988
- Crystal growth, characterization and resistivity measurements of TiSi2 single crystalsJournal of the Less Common Metals, 1987
- Electronic states, bonding, and x-ray absorption spectra ofSiPhysical Review B, 1987
- Resistivity and magnetoresistance of high-purity monocrystalline MoSi2Journal of Physics F: Metal Physics, 1986
- Molybdenum disilicide: Crystal growth, thermal expansion and resistivitySolid State Communications, 1985
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Low-Temperature Specific Heats of GlassyAlloysPhysical Review Letters, 1978
- Soft Transverse Phonons in a Metallic GlassPhysical Review Letters, 1972