Observation of phosphorus pile-up at the SiO2-Si interface
- 1 August 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (8) , 4453-4458
- https://doi.org/10.1063/1.325502
Abstract
The Si oxidation rate at high temperatures is increased by heavy P doping. Sputter ion‐Auger techniques have been used to investigate the oxide thickness and P concentration after 900 °C oxidation with an initial P surface concentration of between 2×1018 and 3.2×1020/cm3. Phosphorus was found to pile up in the Si‐SiO2 interface region. The maximum P concentration near the interface was found to depend on doping and was (at certain P concentrations) an order of magnitude larger than that predicted by redistribution theory. A vacancy–P‐complex model is presented to explain the observed behavior. A correlation between the selective pile‐up of P at the interface and the current gain of planar bipolar transistors is reported.This publication has 15 references indexed in Scilit:
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