Development of InGaAsN-based 1.3 m VCSELs

This publication has 17 references indexed in Scilit:

• Continuous-wave operation of 1.30 µm GaAsSb/GaAsVCSELs
  Electronics Letters, 2001
• Continuous-wave operation of single-transverse-mode 1310-nm VCSELs up to 115/spl deg/C
  IEEE Photonics Technology Letters, 2000
• Long-wavelength vertical-cavity lasers and amplifiers
  IEEE Journal of Selected Topics in Quantum Electronics, 2000
• Room-temperature, CW operation of lattice-matchedlong-wavelength VCSELs
  Electronics Letters, 2000
• InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm
  Electronics Letters, 2000
• 1.29 µm GaInNAs multiple quantum-well ridge-waveguidelaser diodes with improved performance
  Electronics Letters, 1999
• 1.21 µm Continuous-Wave Operation of Highly Strained GaInAs Quantum Well Lasers on GaAs Substrates
  Japanese Journal of Applied Physics, 1999
• GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
  IEEE Photonics Technology Letters, 1998
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
  Japanese Journal of Applied Physics, 1996
• Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
  Japanese Journal of Applied Physics, 1992