Ultrafast electronic disordering during femtosecond laser melting of GaAs
- 19 August 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 67 (8) , 1023-1026
- https://doi.org/10.1103/physrevlett.67.1023
Abstract
We have observed an ultrarapid electronic phase transformation to a centrosymmetric electronic state during laser excitation of GaAs with intense femtosecond pulses. Reflection second-harmonic intensity from the upper 90 atomic layers vanishes within 100 fs; reflectivity rises within 0.5 ps to a steady value characteristic of a metallic molten phase, long before phonon emission can heat the lattice to the melting temperature.Keywords
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