Etch pit density variation and electrical properties of GaSb single crystals grown by the Bridgman method
- 30 April 1988
- journal article
- Published by Elsevier in Materials Letters
- Vol. 6 (7) , 238-241
- https://doi.org/10.1016/0167-577x(88)90029-8
Abstract
No abstract availableKeywords
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