Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells
- 1 November 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (9) , 5490-5492
- https://doi.org/10.1063/1.360695
Abstract
A series of In0.14Ga0.86As/GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width, and intensity change of PL spectroscopy, critical layer thickness has been identified. The critical layer thickness obtained for MOCVD-grown material was found in agreement with theoretical value, but is smaller than material grown by molecular beam epitaxy.This publication has 18 references indexed in Scilit:
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