Oxygen diffusion and reaction at annealed InSb MOS interfaces
- 3 December 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 178 (1-3) , 188-200
- https://doi.org/10.1016/0039-6028(86)90295-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Origin and effects of interface traps in anodic native oxides on InSbApplied Physics Letters, 1985
- Quantitative Auger analysis by depth profiling of line shapes: Application to native oxide-InSb interfacesJournal of Vacuum Science & Technology B, 1985
- Oxide and interface properties of plasma-grown and wet anodic oxides of InSb metal/oxide/semiconductor devicesThin Solid Films, 1985
- Observation of the trend of interface formation in anodic native oxide on InSb by marker experimentsApplied Physics Letters, 1985
- Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaPJournal of the Electrochemical Society, 1980
- Raman Scattering Study on Unoxidized Antimony in Anodic Oxide-Films of InSbJapanese Journal of Applied Physics, 1980
- Characteristics of thermal oxides grown on GaAs1 − xPxThin Solid Films, 1979
- Some properties of plasma-grown GaAs oxidesThin Solid Films, 1979
- Oxide layers on GaAs prepared by thermal, anodic and plasma oxidation: In-depth profiles and annealing effectsThin Solid Films, 1979
- Influence of Temperature on Anodically Grown Native Oxides on Gallium ArsenideJournal of the Electrochemical Society, 1977