Observation of the trend of interface formation in anodic native oxide on InSb by marker experiments
- 1 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 48-50
- https://doi.org/10.1063/1.95847
Abstract
We have investigated the trend of anodization of InSb by predeposition of a very thin Cr layer, acting as a marker. Results of Auger electron spectroscopy show that the oxidation process is carried out by oxygen in diffusion through the oxide film. The details and implications of this observation are discussed.Keywords
This publication has 16 references indexed in Scilit:
- Auger depth profiling studies of interdiffusion and chemical trapping at metal–InP interfacesJournal of Vacuum Science & Technology B, 1983
- Interface Composition Studies of Thermally Oxidized GaAs Using Auger Depth ProfilingJournal of the Electrochemical Society, 1982
- Interface characterization of InSb MOS structuresThin Solid Films, 1982
- Radioactive 31Si marker studies of metal silicide formation: a computer simulationThin Solid Films, 1982
- Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaPJournal of the Electrochemical Society, 1980
- GaAs Oxidation and the Ga‐As‐O Equilibrium Phase DiagramJournal of the Electrochemical Society, 1980
- Raman Scattering Study on Unoxidized Antimony in Anodic Oxide-Films of InSbJapanese Journal of Applied Physics, 1980
- X-Ray Photoemission Study of the Oxidation Process at Cleaved (110) Surfaces of GaAs, GaP and InSbJapanese Journal of Applied Physics, 1978
- The Mos/InP interfaceC R C Critical Reviews in Solid State Sciences, 1975
- The Kinetics and Mechanism of Formation of Anode Films on Single-Crystal InSbJournal of the Electrochemical Society, 1957