Distortion of band-edge luminescence in InP due to self-absorption

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Abstract
Self-absorption is shown to dramatically distort both the intensity and spectral distribution of low-temperature band-edge photoluminescence in InP. The selective reabsorption of bound-exciton emission is shown to give rise to artifactual luminescence peaks in the low-energy portion of the band-edge region that sometimes overwhelm emission from the bound-exciton lines, resulting in dramatic spectral distortions. The severity of these distortions is highly sensitive to excitation power density and surface preparation, both of which affect the fraction of luminescence that escapes from the sample without self-absorption. These effects can easily lead to misinterpretation of luminescence spectra when self-absorption is not taken into account.