Bipolar tunneling field-effect transistor: A three-terminal negative differential resistance device for high-speed applications
- 9 May 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (19) , 1608-1610
- https://doi.org/10.1063/1.99056
Abstract
Carrier injection across a tunnel homojunction is suggested as a new mechanism for a high-speed three-terminal device. The novel feature is the two-dimensional homojunction tunneling within a bipolar modulation doping structure. Negative differential resistance characterized by large peak-to-valley current ratios and high transconductance is anticipated. Estimates of the relevant time constants of the tunnel structure suggest the possibility of very high frequency operation.Keywords
This publication has 17 references indexed in Scilit:
- VIA-2 fundamental oscillations up to 200 GHz in a resonant-tunneling diodeIEEE Transactions on Electron Devices, 1987
- Resonant tunnelling gate field-effect transistorElectronics Letters, 1987
- Tunneling transfer field-effect transistor: A negative transconductance deviceApplied Physics Letters, 1987
- Quantum-well resonant tunneling bipolar transistor operating at room temperatureIEEE Electron Device Letters, 1986
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Erratum: Resonant tunneling of two-dimensional electrons through a quantum wire: A negative transconductance device [Appl. Phys. Lett. 4 7, 1347 (1985)]Applied Physics Letters, 1986
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)Japanese Journal of Applied Physics, 1985
- Low-temperature operation of multiple quantum-well AlxGa1−xAs-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1979
- Tunnel injection into the confined-particle states of an In1−xGaxP1−zAsz well in InPApplied Physics Letters, 1977
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974