High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

This publication has 11 references indexed in Scilit:

• State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs
  Electronics Letters, 2002
• Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN
  Journal of Applied Physics, 2002
• Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
  IEEE Electron Device Letters, 2001
• GaN/AlGaN HEMTs operating at 20 GHz withcontinuous-wave power density > 6 W/mm
  Electronics Letters, 2001
• Very-high power density AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices, 2001
• AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20 GHz
  Electronics Letters, 2000
• High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE
  Electronics Letters, 2000
• A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier
  IEEE Transactions on Microwave Theory and Techniques, 2000
• GaN: Processing, defects, and devices
  Journal of Applied Physics, 1999
• High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
  IEEE Electron Device Letters, 1999