Thermal nitride gate FET technology for VLSI devices
- 1 January 1980
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The use of thermally-grown silicon nitride films with a nominal thickness of 70Å as a gate insulator for submicron-channel IGFETs will be covered. The approach afforded high transconductance and elimination of short-channel effects.Keywords
This publication has 3 references indexed in Scilit:
- Low-voltage alterable EAROM cells with nitride-barrier avalanche-injection MIS (NAMIS)IEEE Transactions on Electron Devices, 1979
- Thermally grown silicon nitride films for high-performance MNS devicesApplied Physics Letters, 1978
- Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with NitrogenJournal of the Electrochemical Society, 1978