Selectively Doped n-InAlAs/InP Heterostructures Grown by MOCVD
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11A) , L1966
- https://doi.org/10.1143/jjap.29.l1966
Abstract
For obtaining an abrupt interface in InAlAs/InP heterostructure by MOCVD, it is very important to suppress the formation of the transition layer induced by the substitution of group-V atoms at the interface. A new switching valve has been designed for obtaining an abrupt heterointerface. A selectively doped n-InAlAs/InP heterostructure grown using this new valve has exhibited SdH oscillation. The 2DEG mobility has been observed to be as high as 99000 cm2/(V ·s) at 77 K.Keywords
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